AOT20N25 250v,20a n-channel mosfet general description product summary v ds i d (at v gs =10v) 20a r ds(on) (at v gs =10v) < 0.17 w 100% uis tested 100% r g tested for halogen free add "l" suffix to part number: AOT20N25l symbol parameter absolute maximum ratings t a =25c unless otherwise noted 300v@150 AOT20N25 the AOT20N25 is fabricated using an advanced high voltage mosfet process that is designed to deliver high levels of performance and robustness in popular ac- dc applications.by providing low r ds(on) , c iss and c rss along with guaranteed avalanche capability this device ca n be adopted quickly into new and existing offline power supply designs.this device is ideal for boost converters a nd synchronous rectifiers for consumer, telecom, indus trial power supplies and led backlighting. units g d s g d s top view to-220 symbol v ds v gs i dm i as e as peak diode recovery dv/dt dv/dt t j , t stg t l symbol r q ja r q cs r q jc c/w AOT20N25 units a c mj w w/ o c -55 to 150 0.6 v/ns c/w 0.5 c maximum junction-to-case 208 1.7 avalanche current c single pulsed avalanche energy g 608 parameter maximum case-to-sink a maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds junction and storage temperature range derate above 25 o c t c =25c 4.5 5 power dissipation b p d v 30 gate-source voltage 20 continuous drain current t c =25c i d a 51 pulsed drain current c 14 t c =100c v parameter drain-source voltage AOT20N25 250 units maximum junction-to-ambient a,d c/w 65 300 thermal characteristics rev0: oct 2011 www.aosmd.com page 1 of 5
AOT20N25 symbol min typ max units 250 300 bv dss / ? tj 0.25 v/ o c 1 10 i gss gate-body leakage current 100 n a v gs(th) gate threshold voltage 3.2 3.8 4.5 v r ds(on) 0.14 0.17 w g fs 16 s v sd 0.72 1 v i s maximum body-diode continuous current 20 a i sm 51 a c iss 1028 pf c oss 167 pf c rss 11 pf r g 1.9 3.9 5.9 w q g 20 25 nc q gs 5.7 nc q gd 8 nc t d(on) 27 ns t r 31 ns t d(off) 70 ns bv dss maximum body-diode pulsed current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time m a v ds =0v, v gs =30v v drain-source breakdown voltage i d =250 a, v gs =0v, t j =25c i d =250 a, v gs =0v, t j =150c i s =1a,v gs =0v v ds =40v, i d =10a forward transconductance zero gate voltage drain current id=250 a, vgs=0v turn-off delaytime v gs =10v, v ds =125v, i d =20a, r g =25 w gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =200v, i d =20a gate source charge gate drain charge switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions static drain-source on-resistance v gs =10v, i d =10a reverse transfer capacitance v gs =0v, v ds =25v, f=1mhz i dss zero gate voltage drain current v ds =250v, v gs =0v diode forward voltage v ds =5v, i d =250 m a v ds =200v, t j =125c t d(off) 70 ns t f 25 ns t rr 179 ns q rr 1.6 m c this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =20a,di/dt=100a/ m s,v ds =100v turn-off delaytime r g =25 w turn-off fall time body diode reverse recovery time i f =20a,di/dt=100a/ m s,v ds =100v a. the value of r q ja is measured with the device in a still air environm ent with t a =25 c. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c, ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. l=60mh, i as =4.5a, v dd =150v, r g =25 ? , starting t j =25 c rev0: oct 2011 www.aosmd.com page 2 of 5
AOT20N25 typical electrical and thermal characteristics 0 5 10 15 20 25 30 0 5 10 15 20 25 30 i d (a) v ds (volts) fig 1: on-region characteristics v gs =5.5v 6v 10v 6.5v 0.1 1 10 100 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics - 55 c v ds =40v 25 c 125 c 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0 5 10 15 20 25 r ds(on) ( w ww w ) i d (a) figure 3: on - resistance vs. drain current and gate v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v i d =10a 40 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 1e+02 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c figure 3: on - resistance vs. drain current and gate voltage 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 bv dss (normalized) t j ( c) figure 5:break down vs. junction temparature rev0: oct 2011 www.aosmd.com page 3 of 5
AOT20N25 typical electrical and thermal characteristics 0 3 6 9 12 15 0 5 10 15 20 25 30 35 v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =200v i d =20a 1 10 100 1000 10000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.01 0.1 1 10 100 0.1 1 10 100 1000 i d (amps) v ds (volts) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c 100 m s 0 5 10 15 20 25 0 25 50 75 100 125 150 current rating i d (a) t case ( c) v ds (volts) figure 10: maximum forward biased safe operating area for AOT20N25 (note f) t case ( c) figure 9: current de-rating (note b) 0.001 0.01 0.1 1 10 1e-06 1e-05 0.0001 0.001 0.01 0.1 1 10 z q qq q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance for AOT20N25 (note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =0.6 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d rev0: oct 2011 www.aosmd.com page 4 of 5
AOT20N25 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vgs vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr rev0: oct 2011 www.aosmd.com page 5 of 5
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